Nexperia, the specialist in high throughput production of basic semiconductor devices, today announced the launch of a new GaN FET device featuring a new generation of high voltage GaN HEMT technology and a proprietary copper-clip CCPAK surface mount package, providing designers of industrial and renewable energy applications with even more options. After more than two decades of hard work, Nexperia has developed extensive expertise in providing large-scale, high-quality copper-clip SMD packages, and is proud to now successfully apply this breakthrough packaging solution, CCPAK, to cascaded gallium nitride field effect tubes (GaN FETs.) The GAN039-650NTB is a 33 mΩ (typical) GaN FET in the CCPAK1212i top-sink package technology, ushering in a new era of combining wide-bandwidth semiconductors with copper-clip packages. This technology brings many advantages to renewable energy applications such as solar and domestic heat pumps, further reinforcing Nexperia’s commitment to developing leading-edge device technology for sustainable applications. The technology is also suitable for a wide range of industrial applications such as servo drives, switched-mode power supplies (SMPS), servers, and telecom applications.
Nexperia‘s innovative CCPAK package utilizes Nexperia’s proven copper clip package technology, eliminating the need for internal solder wires, which reduces parasitic losses, optimizes electrical and thermal performance, and improves device reliability. For even greater design flexibility, the CCPAK GaN FETs are available in top or bottom heat sink configurations to further improve thermal performance.
The cascade configuration of the GAN039-650NTB provides excellent switching and conduction performance, in addition to a robust gate structure that offers high noise tolerance. This feature also helps simplify application design by eliminating the need for complex gate drivers and control circuits, making it easy to drive these devices with standard silicon MOSFET drivers. Nexperia’s GaN technology improves switching stability and contributes to a reduction in die size of approximately 24%. In addition, the device’s RDS(on) is only 33 mΩ at 25°C (typical), while it has a high gate threshold voltage and low equivalent body diode on-drop.
Carlos Castro, vice president and general manager of Nexperia’s GaN FET business unit, said, “Nexperia is acutely aware that designers of industrial and renewable energy equipment need a highly robust switching solution that achieves excellent thermal efficiency when making power conversions. That is why Nexperia decided to combine the excellent switching performance of its cascaded GaN FETs with the superior thermal performance of its CCPAK packages to provide customers with an outstanding solution.” Nexperia continues to enrich its CCPAK portfolio with the top-sinking 33 mΩ (typical), 650 V GAN039-650NTB, and will soon introduce a bottom-sinking version, the GAN039-650NBB, with the same RDS(on) as its predecessor.