A new germanium-based material with superconducting properties has been discovered, providing a new approach for the engineering realization of integrated quantum devices. Recently, an international collaborative research team published their findings in Nature Nanotechnology, announcing the successful fabrication of a germanium superconducting material capable of conducting electricity in a zero-resistance state. This holds promise for developing scalable quantum devices based on mature semiconductor processes.
Superconductivity in semiconductor materials is a key objective for improving chip computing power, energy efficiency, and driving the development of quantum technologies. However, achieving superconductivity in traditional semiconductors such as silicon and germanium has always faced technological challenges. This research team, comprised of researchers from New York University, Ohio State University, the University of Queensland, and ETH Zurich, used molecular beam epitaxy (MBE) to precisely embed gallium atoms into the germanium lattice, achieving high-concentration doping.
MBE, as a thin-film growth technique that allows for atomic-level control, ensured a high degree of lattice order in this study. Although doping introduced some lattice distortion, the material remained stable. The manipulated germanium thin film exhibited superconducting properties at a low temperature of approximately 3.5 K (approximately -269.7 °C).
Germanium, a group IV semiconductor, is widely used in modern electronic chips and fiber optic communications. The key to achieving its superconductivity lies in introducing a sufficient number of charge carriers to form electron pairs and coordinate their movement at low temperatures, thereby eliminating resistance. Previously, high-concentration doping often led to lattice destruction, making it difficult to maintain a stable superconducting state. This research, however, has successfully overcome this technical obstacle by precisely controlling the growth conditions.
The research team pointed out that by manipulating the germanium crystal structure, a band structure supporting electron pairing can be induced, thus achieving superconductivity. This achievement not only deepens the understanding of the properties of group IV semiconductors but also provides a new material pathway for the engineering realization of next-generation quantum circuits, low-temperature, low-power electronic devices, and high-sensitivity sensors.
Crucially, this material system can construct a high-quality interface between the superconducting and semiconductor regions, which is an important foundation for realizing integrated quantum technologies. Considering the widespread use of germanium in advanced chip manufacturing, this latest technology is expected to be compatible with existing semiconductor foundry lines, thereby accelerating the practical application of quantum systems.
From an engineering application perspective, novel germanium materials that combine the precise control capabilities of semiconductors with the zero-loss characteristics of superconductors are expected to be widely used in high-speed intelligent terminals, high-efficiency power grid systems, and new energy transmission in the future, driving technological leaps in multiple industries.
